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| FDJ127P July 2004 FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications. Features * -4.1 A, -20 V. RDS(ON) = 60 m @ VGS = -4.5 V RDS(ON) = 85 m @ VGS = -2.5 V RDS(ON) = 133 m @ VGS = -1.8 V * Low gate charge * High performance trench technology for extremely low RDS(ON) * Compact industry standard SC75-6 surface mount package Applications * Battery management * Load switch S S G Bottom Drain 4 5 3 2 1 SC75-6 FLMP S S S 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1) Units V V A W C -4.1 -16 1.6 -55 to +150 (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient Note 1) 77 C/W Package Marking and Ordering Information Device Marking .C Device FDJ127P Reel Size 7'' Tape width 8mm Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDJ127P Rev B2 (W) FDJ127P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min -20 Typ Max Units V Off Characteristics ID = -250 A,Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 8 V, VGS = -8 V, VDS = 0 V VDS = 0 V ID = -250 A -0.4 -0.8 3 42 61 97 60 -16 10 780 120 60 VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 10 9 27 11 VDS = -10 V, ID = -4.1 A, VGS = -4.5 V 7.2 1.7 1.5 -2.5 (Note 2) -12 -1 100 -100 mV/C A nA nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, -1.5 V mV/C ID = -250 A,Referenced to 25C VGS = -4.5 V, ID = -4.1 A ID = -3.5 A VGS = -2.5 V, VGS = -1.8 V, ID = -2.7 A VGS = -4.5 V, ID = -4.1,TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -4.1 A 60 85 133 m ID(on) gFS On-State Drain Current Forward Transconductance A S pF pF pF 20 10 43 20 10 ns ns ns ns nC nC nC A V Dynamic Characteristics Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, V GS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr td(off) tf Qg Qgs Qgd IS VSD Notes: Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.5 A -0.8 -1.2 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design a) 77C/W when mounted 2 on a 1in pad of 2 oz copper. b) 110C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDJ127P Rev B2 (W) FDJ127P Typical Characteristics 15 -3.5V -ID, DRAIN CURRENT (A) 12 - RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V 2 -3.0V 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V VGS=-2.0V 9 -2.0V 6 3 -1.5V 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 3 6 9 12 15 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.22 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = -4.1A VGS = -4.5V ID = -2.1A 0.18 0.14 TA = 125oC 0.1 TA = 25oC 0.06 0.02 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 8 TA = -55 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 25 C 125oC o VGS = 0V 1 TA = 125oC 0.1 25 C o o 6 4 0.01 2 -55 C 0.001 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDJ127P Rev B2 (W) FDJ127P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -4.1A 4 -15V 3 CAPACITANCE (pF) VDS = -5V -10V 1000 CISS 800 f = 1 MHz VGS = 0 V 600 2 400 COSS 200 CRSS 0 5 10 15 20 1 0 0 1 2 3 4 5 6 7 8 9 Qg, GATE CHARGE (nC) 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 10s DC 8 SINGLE PULSE RJA = 110C/W TA = 25C 6 1 VGS = -4.5V SINGLE PULSE RJA = 110oC/W TA = 25oC 4 0.1 2 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 110 C/W o 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDJ127P Rev B2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
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